Jayaraman, A. (1972) Pressure-induced electronic collapse and semiconductor-to-metal transition in EuO Physical Review Letters, 29 (25). pp. 1674-1676. ISSN 0031-9007
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1103/PhysRevLett.29.1674
Related URL: http://dx.doi.org/10.1103/PhysRevLett.29.1674
Abstract
Pressure-volume data for EuO to 400 kbar are presented. An electronic collapse in the Eu ion involving the promotion of a 4f electron to the 5d state occurs near 300 kbar at room temperature. The structure remains NaCl type in this transformation. The transition appears to be first order and is from semiconductor to the metallic state. The collapsed NaCl phase undergoes a phase change to the CsCl-type structure near 400 kbar.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 96001 |
| Deposited On: | 30 Nov 2012 09:13 |
| Last Modified: | 30 Nov 2012 09:13 |
Repository Staff Only: item control page
