Chatterjee, A. ; Singh, A. ; Jayaraman, A. ; Bucher, E. (1971) Pressure-induced 4f-5d electron collapse in ytterbium monotelluride Physical Review Letters, 27 (23). pp. 1571-1573. ISSN 0031-9007
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Official URL: http://prl.aps.org/abstract/PRL/v27/i23/p1571_1
Related URL: http://dx.doi.org/10.1103/PhysRevLett.27.1571
Abstract
The pressure-volume relationship in YbTe has been studied by high-pressure x-ray diffraction up to 300 kbar. This relationship is anomalous in the region 150-190 kbar indicating a continuous electronic collapse with pressure, in which the Yb2+ changes to Yb3+ state. This must involve 4f-5d electron promotion and must result in a semiconductor-to-metal transition. The behavior of YbTe suggests that in rare-earth chalcogenides with large band gap a continuous transition would be favored.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 95995 |
| Deposited On: | 30 Nov 2012 09:31 |
| Last Modified: | 30 Nov 2012 09:31 |
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