Single crystal EPR study of VO2+ in LiCsSO4

Ananth, Kumari Murthy ; Manoharan, P. T. (1993) Single crystal EPR study of VO2+ in LiCsSO4 Journal of Physics and Chemistry of Solids, 54 (7). pp. 835-843. ISSN 0022-3697

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Official URL: http://www.sciencedirect.com/science/article/pii/0...

Related URL: http://dx.doi.org/10.1016/0022-3697(93)90253-N

Abstract

A detailed single crystal EPR study of VO2+ in LiCsSO4 (LCS) has been carried out from room temperature down to 133 K. The room temperature EPR analysis indicates that VO2+ substitutes for the Cs atom and that there are six magnetically inequivalent Cs+ sites. The charge compensation takes place in two different ways. For two of the sites the charge compensation occurs by removal of a neighbouring Cs atom at a distance of ≈4.5 Å; whereas for the other four magnetically inequivalent sites the charge compensation is due to removal of a neighbouring Li atom at a distance of 3.5 Å from it. The single crystal analysis yields the following spin-Hamiltonian parameters at room temperature: gXX = 1.987 ± 0.002, gYY = 1.983 ± 0.002, gZZ = 1.932 ± 0.002; AXX = 7.8 ± 0.2 mT, AYY = 7.4 ± 0.2 mT, AZZ = 19.8 ± 0.2 mT. Around 202 K there is a ferroelastic phase transition evidenced by the presence of two chemically inequivalent sites.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:EPR; LiCsSO4; VO2+ Impurity; Room Temperature Magnetic Inequivalence; Low Temperature Ferroelastic
ID Code:95712
Deposited On:07 Feb 2013 09:17
Last Modified:07 Feb 2013 09:17

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