Gettering of impurities from gallium arsenide

Dastidar, P. R. ; Ravindran, K. ; Pant, H. C. (1969) Gettering of impurities from gallium arsenide IEE Electronics Letters, 5 (22). pp. 553-554. ISSN 0013-5194

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Impurities have been gettered from gallium arsenide using a glass surface layer. Mobility has been found to increase by a factor of two to three. Injection-laser threshold current density at 77K reduced from 750Acm-2 to 425Acm-2.

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