Singh, Sanjay ; Rawat, R. ; Barman, S. R. (2011) Existence of modulated structure and negative magnetoresistance in Ga excess Ni-Mn-Ga Applied Physics Letters, 99 (2). 021902_1-021902_3. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v99/i2/p02190...
Related URL: http://dx.doi.org/10.1063/1.3604015
Abstract
Ni2-xMnGa1+x (0.4 ≤x≤ 0.9) show the existence of modulated crystal structure at room temperature (RT) in the martensite phase, exhibit ferromagnetic behavior and have high martensitic transition temperature. The saturation magnetic moment decreases as Ga content increases, and this is related to antisite defects between Mn and Ga atoms leading to Mn-Mn nearest neighbor antiferromagnetic interaction. Negative magnetoresistance is observed at RT that increases linearly with magnetic field. These properties of Ga excess Ni-Mn-Ga show that it is a potential candidate for technological applications.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Antiferromagnetic Materials; Antisite Defects; Crystal Structure; Exchange Interactions (electron); Ferromagnetic Materials; Gallium Alloys; Magnetic Moments; Magnetoresistance; Manganese Alloys; Martensitic Transformations; Nickel Alloys |
| ID Code: | 93085 |
| Deposited On: | 13 Jun 2012 10:58 |
| Last Modified: | 13 Jun 2012 10:58 |
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