Pressure-induced change in temperature coefficient of electrical resistivity in CeCuAs2

Abliz, Melike ; Nakano, Tomohito ; Sampathkumaran, Echur Varadadesikan ; Jemetio, Jean Paul Feudjio ; Doert, Thomas ; Hedo, Masato ; Uwatoko, Yoshiya (2005) Pressure-induced change in temperature coefficient of electrical resistivity in CeCuAs2 Journal of the Physical Society of Japan, 74 . pp. 508-510. ISSN 0031-9015

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Official URL: http://jpsj.ipap.jp/link?JPSJ/74/508/

Related URL: http://dx.doi.org/10.1143/JPSJ.74.508

Abstract

The intermetallic compound, CeCuAs2, crystallizing in a HfCuSi2-type tetragonal structure, has recently been shown to exhibit a negative temperature (T) coefficient of electrical resistivity (ρ) in the entire T-range of investigation (45 mK to 300 K). Here, we report that an application of external pressure (up to 10 GPa) profoundly influences ρ(T) behavior, reversing the sign of dρ/dT at pressures above 8 GPa, presumably arising from increasing 4f hybridization or changes in pseudo-gap. Such a behavior is uncommon among Ce-based intermetallic compounds.

Item Type:Article
Source:Copyright of this article belongs to Institute of Pure and Applied Physics.
ID Code:92895
Deposited On:06 Jun 2012 13:47
Last Modified:06 Jun 2012 13:47

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