Theory of hopping transport of holes in amorphous SiO2

Deb, B. M. ; Chandorkar, A. N. (1995) Theory of hopping transport of holes in amorphous SiO2 Journal of Applied Physics, 77 (10). pp. 5248-5255. ISSN 0021-8979

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A quantum-mechanical theory of hole transport in SiO2 is developed based on modeling of the oxide as an array of time-dependent δ -function potential well distribution. Holes undergo a variable range hopping transport which is dispersive in nature. The oxide, being an insulator, involves a maximum cutoff phonon frequency of 1014-1015 s-1. The Schrodinger equation is solved along with the Poisson equation using a piecewise linear internal field. The theory is applied to metal-oxide-semiconductor structures subjected to a short radiation pulse.

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ID Code:9228
Deposited On:29 Oct 2010 11:13
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