Jose, Feby ; Ramaseshan, R. ; Dash, S. ; Bera, S. ; Tyagi, A. K. ; Baldev Raj, (2010) Response of magnetron sputtered AlN films to controlled atmosphere annealing Journal of Physics D: Applied Physics, 43 (7). 075304 -075304. ISSN 0022-3727
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Official URL: http://iopscience.iop.org/0022-3727/43/7/075304
Related URL: http://dx.doi.org/10.1088/0022-3727/43/7/075304
Abstract
The present investigation deals with the examination of the response of amorphous AlN films to post-deposition annealing environments such as high vacuum (HV) and nitrogen atmosphere (NA). The c/a ratio values from GIXRD for both cases are around 1.602. The XPS profile of NA-AlN shows a deficiency of nitrogen on the surface, whereas the oxygen impurity level is negligible in the case of NA compared with HV. The PL spectra substantiate the nitrogen vacancies in NA-AlN. The amorphous AlN exhibits a nanoindentation hardness of 18 GPa.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics. |
| ID Code: | 91286 |
| Deposited On: | 17 May 2012 10:29 |
| Last Modified: | 17 May 2012 10:31 |
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