Kabra, V. K. ; Pandey, D. (1996) Evolution of diffuse scattering during 2H to 6H 'direct' transformation in SiC Phase Transitions: A Multinational Journal, 57 (4). pp. 199-223. ISSN 0141-1594
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Official URL: http://www.tandfonline.com/doi/abs/10.1080/0141159...
Related URL: http://dx.doi.org/10.1080/01411599608208746
Abstract
We discuss the limitations of the earlier models in explaining the evolution of diffuse scattering during the 2H to 6H direct transformation in single crystals of SiC above 2000°C. Monte Carlo technique is employed to predict the diffuse scattering along c∗ using a nucleation and growth model. The results obtained by simulation are compared with those obtained analytically, assuming sequential insertion of stacking faults. The predicted diffraction effects are found to be in agreement with those observed experimentally. It is shown that the short range and long range correlations are in conflict for the arrest state of the 2H to 6H 'direct' transformation.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Taylor and Francis Group. |
| Keywords: | SiC; Diffuse Scattering; Stacking Faults; Monte Carlo Technique |
| ID Code: | 88752 |
| Deposited On: | 29 Mar 2012 14:38 |
| Last Modified: | 29 Mar 2012 14:38 |
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