Jagriti, Singh ; Budhani, R. C. (1987) Chemical structure of nitrogen in amorphous silicon matrix Applied Physics Letters, 51 (13). pp. 978-980. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v51/i13/p978_...
Related URL: http://dx.doi.org/10.1063/1.98782
Abstract
Direct evidence of substitutional doping of nitrogen in ion beam deposited hydrogenated amorphous silicon, from analysis of infrared spectra and Si-2p core level shape measured with x-ray photoelectron spectroscopy (XPS), is presented. For the first time the XPS technique has been used to deduce the upper limit for substitutional solid solubility of the impurity
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 87801 |
| Deposited On: | 22 Mar 2012 07:44 |
| Last Modified: | 22 Mar 2012 07:44 |
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