Nitrogen doping in hydrogenated amorphous silicon

Singh, Jagriti ; Budhani, R. C. (1987) Nitrogen doping in hydrogenated amorphous silicon Solid State Communications, 64 (3). pp. 349-352. ISSN 0038-1098

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A direct evidence of substitutional doping in ion beam deposited amorphous hydrogenated silicon by nitrogen is presented. From the analysis of infrared (IR) absorption spectra and Si-2p core level shape, measured with X-ray photoelectron spectroscopy (XPS), the preferential tendency of nitrogen to go in for three-fold coordination at higher concentration and tetrahedral bonding at lower concentration (∃4 at %) is established. XPS technique has been used for the first time to deduce the upper limit for substitutional solid solubility of the impurity.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:87800
Deposited On:22 Mar 2012 07:44
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