Singh, Jagriti ; Budhani, R. C. (1987) Nitrogen doping in hydrogenated amorphous silicon Solid State Communications, 64 (3). pp. 349-352. ISSN 0038-1098
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0038-1098(87)90980-X
Abstract
A direct evidence of substitutional doping in ion beam deposited amorphous hydrogenated silicon by nitrogen is presented. From the analysis of infrared (IR) absorption spectra and Si-2p core level shape, measured with X-ray photoelectron spectroscopy (XPS), the preferential tendency of nitrogen to go in for three-fold coordination at higher concentration and tetrahedral bonding at lower concentration (∃4 at %) is established. XPS technique has been used for the first time to deduce the upper limit for substitutional solid solubility of the impurity.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 87800 |
| Deposited On: | 22 Mar 2012 07:44 |
| Last Modified: | 22 Mar 2012 07:44 |
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