Linear photon upconversion of 400 meV in an AlGaInP/GaInP quantum well heterostructures to visible light at room temperature

Abstract

We linearly up convert photons from 820 to 650 nm, an energy change of -400 meV, using a AlGaInP/GaInP quantum well heterostructure. Current and luminescence-voltage measurements are presented at temperatures from 6 to 300 K. Photoexcited electrons are injected into the semiconductor from the Au Schottky and a forward bias across the p⁺-i-n heterostructure drifts electrons into the GaInP quantum well. Holes diffuse from the heavily doped substrate and radiatively recombine, emitting -650 nm light. Linear upconversion is verified by injecting hot electrons with a solid-state tunnel junction. This device encourages other technologies, including night-vision aids and thermal energy converters.