Russell, K. J. ; Appelbaum, Ian ; Yi, Wei ; Monsma, D. J. ; Capasso, F. ; Marcus, C. M. ; Narayanamurti, V. ; Hanson, M. P. ; Gossard, A. C. (2004) Avalanche spin-valve transistor Applied Physics Letters, 85 (19). pp. 4502-4504. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v85/i19/p4502...
Related URL: http://dx.doi.org/10.1063/1.1818339
Abstract
A spin-valve transistor with a GaAs/AlGaAs avalanche-multiplying collector is demonstrated with >1000% magnetocurrent variation and ≈ 35× amplification of the collector current. The intrinsic amplification of the magnetic-field sensitive collector current should allow fabrication of spin-valve transistors with high gain in a variety of materials.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Gallium Arsenide; Aluminium Compounds; I-V Semiconductors; Spin Valves; Bipolar Transistors; Amplification; Leakage Currents; Band Structure; Magnetoresistance |
| ID Code: | 87552 |
| Deposited On: | 19 Mar 2012 12:41 |
| Last Modified: | 19 Mar 2012 12:41 |
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