Ballistic hole emission luminescence

Appelbaum, Ian ; Russell, K. J. ; Shalish, I. ; Narayanamurti, V. ; Hanson, M. P. ; Gossard, A. C. (2004) Ballistic hole emission luminescence Applied Physics Letters, 85 (12). pp. 2265-2267. ISSN 0003-6951

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Using a method complementary to ballistic electron emission luminescence (BEEL), we demonstrate tunnel-junction injection of sub-band-gap hot holes into the valence band of a semiconductor heterostructure to generate band-gap luminescence. This mechanism can be used in a scanning-probe geometry for the development of a simultaneous hole transport and luminescence microscopy of p-type Schottky devices.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Aluminium Compounds; Gallium Arsenide; Silicon; Beryllium; III-V Semiconductors; Elemental Semiconductors; Semiconductor Quantum Wells; Semiconductor Heterojunctions; Quantum Well Devices; Luminescent Devices; Tunnel Transistors; Ballistic Transport; Valence Bands; Energy Gap; Quantum Confined Stark Effect
ID Code:87551
Deposited On:19 Mar 2012 12:41
Last Modified:19 Mar 2012 12:41

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