Appelbaum, Ian ; Russell, K. J. ; Kozhevnikov, M. ; Narayanamurti, V. ; Hanson, M. P. ; Gossard, A. C. (2004) Room-temperature ballistic electron emission luminescence spectroscopy with a scanning tunneling microscope Applied Physics Letters, 84 (4). pp. 547-549. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v84/i4/p547_s...
Related URL: http://dx.doi.org/10.1063/1.1644329
Abstract
We present a luminescence spectroscopy for semiconductor heterostructures based on local hot electron injection from a scanning tunneling microscope tip. In addition to a tip voltage bias exceeding the metal-semiconductor Schottky barrier height, this process requires a collector bias voltage to satisfy energy conservation. These results indicate that this method could be used to study local electron transport and simultaneous electroluminescence in buried luminescent layers at depths greater than the ballistic electron mean free path in the collector.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Gallium Arsenide; Aluminium Compounds; III-V Semiconductors; Field Emission Electron Microscopy; Scanning Tunnelling Microscopy; Semiconductor Heterojunctions; Hot Carriers; Schottky Barriers; Semiconductor-metal Boundaries; Electroluminescence; Buried Layers |
| ID Code: | 87548 |
| Deposited On: | 19 Mar 2012 12:41 |
| Last Modified: | 19 Mar 2012 12:41 |
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