Appelbaum, Ian ; Russell, K. J. ; Narayanamurti, V. ; Monsma, D. J. ; Marcus, C. M. ; Hanson, M. P. ; Gossard, A. C. ; Temkin, H. ; Perry, C. H. (2003) Ballistic electron emission luminescence Applied Physics Letters, 82 (25). pp. 4498-4500. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v82/i25/p4498...
Related URL: http://dx.doi.org/10.1063/1.1584524
Abstract
We describe the design, fabrication, and operation of a GaAs-based heterostructure device which emits band gap luminescence from solid-state tunnel-junction ballistic injection of electrons with sub-bandgap energy. We find that, due to energy conservation requirements, a collector bias exceeding a threshold determined by the Schottky barrier height and sample band gap energy must be applied for luminescence emission. The consequences of these results for a hybrid scanning-probe microscopy and spectroscopy combining both ballistic electron emission microscopy and scanning tunneling luminescence are emphasized.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Gallium Arsenide; III-V Semiconductors; Schottky Barriers; Field Emission Electron Microscopy; Scanning Tunnelling Microscopy; Scanning Tunnelling Spectroscopy; Energy Gap; Electroluminescence |
| ID Code: | 87544 |
| Deposited On: | 19 Mar 2012 12:40 |
| Last Modified: | 19 Mar 2012 12:40 |
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