Russell, K. J. ; Appelbaum, Ian ; Temkin, H. ; Perry, C. H. ; Narayanamurti, V. ; Hanson, M. P. ; Gossard, A. C. (2003) Room-temperature electro-optic up-conversion via internal photoemission Applied Physics Letters, 82 (18). pp. 2960-2962. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v82/i18/p2960...
Related URL: http://dx.doi.org/10.1063/1.1571981
Abstract
We describe the fabrication and operation of a device which performs linear optical up-conversion at room temperature. The mechanism for up-conversion is based on internal photoemission from a Schottky contact. We then describe the voltage dependence of this device and interpret it in terms of total energy conservation. Although an AlGaAs/GaAs system is employed here, the functionality is not material-specific and therefore should be widely applicable to different materials systems, such as GaN/InGaN.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Aluminium Compounds; Gallium Arsenide; III-V Semiconductors; Electro-optical Devices; Optical Frequency Conversion; Photodetectors; Luminescent Devices; Schottky Barriers |
| ID Code: | 87543 |
| Deposited On: | 19 Mar 2012 12:41 |
| Last Modified: | 19 Mar 2012 12:41 |
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