Reddy, C. V. ; Narayanamurti, V. ; Ryou, J. H. ; Dupuis, R. D. (2002) Current transport in InP/In0.5(Al0.6Ga0.4)0.5P self-assembled quantum dot heterostructures using ballistic electron emission microscopy/spectroscopy Applied Physics Letters, 80 (10). pp. 1770-1772. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v80/i10/p1770...
Related URL: http://dx.doi.org/10.1063/1.1458689
Abstract
Ballistic electron emission microscopy/spectroscopy (BEEM/S) has been employed to image, inject, and investigate the current transport through self-assembled InP quantum dots embedded in InAlGaP barriers. The spectroscopy performed on the dot and off the dot revealed that the charge confinement within the dots is more effective than the leakage through the quasibound states. Evidence for the charge accumulation in the quantum dots is presented with the help of BEEM imaging as a function of the tip bias.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Indium Compounds; III-V Semiconductors; Aluminium Compounds; Gallium Compounds; Self-assembly; Semiconductor Quantum Dots; Semiconductor Heterojunctions; Scanning Tunnelling Microscopy; Scanning Tunnelling Spectroscopy |
| ID Code: | 87538 |
| Deposited On: | 19 Mar 2012 12:40 |
| Last Modified: | 19 Mar 2012 12:40 |
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