Reddy, C. V. ; Narayanamurti, V. ; Ryou, J. H. ; Chowdhury, U. ; Dupuis, R. D. (2000) Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure Applied Physics Letters, 77 (8). pp. 1167-1169. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v77/i8/p1167_...
Related URL: http://dx.doi.org/10.1063/1.1289264
Abstract
A direct spectroscopic signature associated with the quantized state of the charge carriers in three-dimensionally confined InP quantum dots (QDs) is reported using a ballistic electron emission microscopy (BEEM)/spectroscopy technique. The self-assembled InP QDs are sandwiched in an AlInP double-barrier heterostructure. The excellent nanometer-scale lateral resolution of the BEEM technique is used to investigate the current transport mechanism by the direct injection of electrons into a single quantum dot. The BEEM spectra taken on and off the dot revealed the presence of a localized state at around 0.1± 0.02 eV above the ground state.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Indium Compounds; III-V Semiconductors; Semiconductor Quantum Dots; Interface States; Resonant Tunnelling; Field Emission Electron Microscopy; Aluminium Compounds; Charge Injection |
| ID Code: | 87528 |
| Deposited On: | 19 Mar 2012 12:39 |
| Last Modified: | 19 Mar 2012 12:39 |
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