The role of ballistic eclectron emission microscopy for characterization of physical phenomena in semiconductors alloys and quantum structures

Narayanamurti, Venkatesh ; Kozhevnikov, Michael (2000) The role of ballistic eclectron emission microscopy for characterization of physical phenomena in semiconductors alloys and quantum structures International Journal of High Speed Electronics and Systems, 10 (1). pp. 55-74. ISSN 0129-1564

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Official URL: http://www.worldscinet.com/ijhses/10/1001/S0129156...

Related URL: http://dx.doi.org/10.1142/S012915640000009X

Abstract

The measurement of the physical properties of individual semiconductor quantum objects at a length scale corresponding to the de Broglie wavelength of electrons in most semiconductors (a few mm) is a difficult challenge. Determination of spectroscopic properties of individual quantum objects buried below the surface is particularly daunting. In this paper we will review briefly recent progress in the use of BEEM (ballistic electron emission microscopy) for the study of semiconductor alloys and novel quantum objects. We will also discuss general aspects of BEEM experiment and theory in true ballistic and quasi-ballistic hot carrier transport. Examples of the use of this technique for studying buried heterojunctions will be presented. Potential modifications of the technique for imaging the optical emission under conditions of ballistic electron injection will also be discussed.

Item Type:Article
Source:Copyright of this article belongs to World Scientific Publishing Company.
ID Code:87526
Deposited On:19 Mar 2012 06:57
Last Modified:19 Mar 2012 06:57

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