Narayanamurti, Venkatesh (1998) Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and qantum dots Proceedings of SPIE, 3287 . p. 152. ISSN 0277-786X
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Related URL: http://dx.doi.org/10.1117/12.304476
Abstract
The measurement of heterojunction band parameters and their spatial variation is of fundamental importance for the operation of heterostructure devices. Ballistic electron emission microscopy (BEEM) is a powerful, new low energy electron microscopy for imaging and spectroscopy of buried quantum objects and non-destructive local characterization of buried semiconductor heterostructures with nm resolution. We will present several new and novel applications of BEEM for semiconductor heterostructure characterization.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The International Society for Optical Engineering. |
| ID Code: | 87520 |
| Deposited On: | 19 Mar 2012 06:56 |
| Last Modified: | 19 Mar 2012 06:56 |
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