Narayanamurti, Venkatesh (1997) Ballistic electron emission microscopy (BEEM) and spectroscopy of buried semiconductor heterostructures and quantum dots (STM-BEEM interfaces) Science Reports of the Research Institutes, Tohoku University - Series A: Physics, Chemistry, and Metallurgy, 44 (2). 165 - 172. ISSN 0040-8808
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Official URL: http://jairo.nii.ac.jp/0085/00021401/en
Related URL: http://dx.doi.org/0085/00021401/en
Abstract
BEEM is a powerful, new low energy electron microscopy for imaging and spectroscopy of buried quantum objects and nondestructive local characterization of buried semiconductor heterostructures. We will present several applications : 1) Imaging and spectroscopy of 300Å InAs islands confined by GaAs potential barriers 2) Local conduction band offsets of GaSb self assembled quantum dots in GaAs 3) Spatial probing of the order-disorder transition in GaInP/GaAs heterostructures 4) Imaging of misfit dislocations at the InGaAs/GaAs interface buried 600Å below the surface 5) Conduction band structure of GaN ballistic electron emission microscopy semiconductor heterostructure quantum dots band offset InAs GaAs GaSb GaN.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Tohoku University. |
| Keywords: | Ballistic Electron Emission Microscopy; Semiconductor Heterostructure; Quantum Dots; Band Offset; InAs; GaAs; GaN |
| ID Code: | 87518 |
| Deposited On: | 19 Mar 2012 06:56 |
| Last Modified: | 19 Mar 2012 06:56 |
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