Brazel, E. G. ; Chin, M. A. ; Narayanamurti, V. ; Kapolnek, D. ; Tarsa, E. J. ; DenBaars, S. P. (1997) Ballistic electron emission microscopy study of transport in GaN thin films Applied Physics Letters, 70 (3). pp. 330-332. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v70/i3/p330_s...
Related URL: http://dx.doi.org/10.1063/1.118406
Abstract
Ballistic electron emission microscopy (BEEM) measurements on GaN grown on sapphire substrates reveal a second conduction band minimum -340 meV above the absolute band minimum at the zone center (G point). A significant lateral variation of the energy difference between the two band minima, ± 50 meV, was observed which may result from nonuniform strain in the material. The existence of two conduction bands in close proximity may affect device applications, i.e., GaN based lasers and electronic devices.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Thin Films; Gallium Compounds; Nitrogen Compounds; Wide Band Gap Semiconductors; Ballistics; Electron Emission; Scanning Probe Microscopy; Band Structure; Conduction Bands; Gallium Nitrides; Electronic Structure; Thin Films; Electron Microscopy; Laser Materials; Chemical Vapor Deposition; Doped Materials; Tunnel Effect |
| ID Code: | 87515 |
| Deposited On: | 19 Mar 2012 06:54 |
| Last Modified: | 19 Mar 2012 06:54 |
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