Lee, E. Y. ; Bhargava, S. ; Chin, M. A. ; Narayanamurti, V. ; Pond, K. J. ; Luo, K. (1996) Observation of misfit dislocations at the InxGa1-xAs/GaAs interface by ballistic-electron-emission microscopy Applied Physics Letters, 69 (7). pp. 940-942. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v69/i7/p940_s...
Related URL: http://dx.doi.org/10.1063/1.116950
Abstract
We report ballistic-electron-emission microscopy (BEEM) imaging and spatially resolved spectroscopy of InxGa1-xAs/GaAs misfit dislocations 800 Å below the surface. Majority-carrier scattering by a fraction of misfit dislocations was seen to locally reduce the BEEM current and to give logarithmic spatial dependence, which suggests charging of the dislocation cores.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Gallium Arsenides; Indium Arsenides; Interface Structure; Misfit Dislocations; Electron Emission; Microscopy; Atomic Force Microscopy; TEM |
| ID Code: | 87511 |
| Deposited On: | 19 Mar 2012 06:54 |
| Last Modified: | 19 Mar 2012 06:54 |
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