O'Shea, J. J. ; Reaves, C. M. ; Chin, M. A. ; Denbaars, S. P. ; Gossard, A. C. ; Narayanamurti, V. ; Jones, E. D. (1995) Ballistic electron emission microscopy (BEEM) studies of GaInP/GaAs heterostructures MRS Online Proceedings Library, 417 . p. 79. ISSN 1946-4274
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Official URL: http://journals.cambridge.org/action/displayAbstra...
Related URL: http://dx.doi.org/10.1557/PROC-417-79
Abstract
Ballistic-electron-emission microscopy (BEEM) has been used to study band-offsets in n-and p-type GaInP/GaAs heterostructures. We determine room temperature offsets of 30 meV and 350 meV in the conduction and valence bands, respectively, for thin GaInP layers grown by metal-organic chemical vapor deposition (MOCVD) at 610° C. Low temperature (77 K) measurements also indicate at least 90% of the band discontinuity lies in the valence band for these ordered GaInP samples.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Cambridge University Press. |
| ID Code: | 87510 |
| Deposited On: | 19 Mar 2012 06:53 |
| Last Modified: | 19 Mar 2012 06:53 |
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