Artificially structured thin-film materials and interfaces

Narayanamurti, V. (1987) Artificially structured thin-film materials and interfaces Science, 235 (4792). 1023-1028 . ISSN 0036-8075

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The ability to artificially structure new materials on an atomic scale by using advanced crystal growth methods such as molecular beam epitaxy and metal-organic chemical vapor deposition has recently led to the observation of unexpected new physical phenomena and to the creation of entirely new classes of devices. In particular, the growth of materials of variable band gap in technologically important semiconductors such as GaAs, InP, and silicon will be reviewed. Recent results of studies of multilayered structures and interfaces based on the use of advanced characterization techniques such as high-resolution transmission electron microscopy and scanning tunneling microscopy will be presented.

Item Type:Article
Source:Copyright of this article belongs to American Association for the Advancement of Science.
ID Code:87506
Deposited On:19 Mar 2012 06:53
Last Modified:19 Mar 2012 06:53

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