Observation of optically excited near-zone-edge phonons in GaAs by diffuse X-ray scattering

McWhan, D. B. ; Hu, P. ; Chin, M. A. ; Narayanamurti, V. (1982) Observation of optically excited near-zone-edge phonons in GaAs by diffuse X-ray scattering Physical Review B: Condensed Matter and Materials Physics, 26 (8). pp. 4774-4776. ISSN 1098-0121

Full text not available from this repository.

Official URL: http://prb.aps.org/abstract/PRB/v26/i8/p4774_1

Related URL: http://dx.doi.org/10.1103/PhysRevB.26.4774

Abstract

We report on the use of diffuse X-ray scattering as a probe of nonequilibrium phonon excitations generated optically in GaAs at T≈ 1.5 K. The measurements show a substantial athermal population of TA phonons near the [111] zone boundary consistent with a lifetime of microseconds.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:87502
Deposited On:19 Mar 2012 06:53
Last Modified:19 Mar 2012 06:53

Repository Staff Only: item control page