Ballistic transport and decay of near zone-edge non-thermal phonons in semiconductors

Ulbrich, R. G. ; Narayanamurti, V. ; Chin, M. A. (1981) Ballistic transport and decay of near zone-edge non-thermal phonons in semiconductors Journal de Physique. Colloques, 42 (C6). C6_226 - C6_228. ISSN 0449-1947

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Official URL: http://jphyscol.journaldephysique.org/index.php?op...

Related URL: http://dx.doi.org/10.1051/jphyscol:1981664

Abstract

We present results on the energy transport by near zone-edge transverse phonon pulses generated in the process of non-radiative electronhole pair recombination at T=1.4 K in GaAs and InP. Depending on orientation and distance, ballistic transport of phonons with frequencies between 1.0 and 2 THz is reported.

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Deposited On:19 Mar 2012 06:52
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