Jayaraman, A. ; Narayanamurti, V. ; Bucher, E. ; Maines, R. G. (1970) Pressure-induced metal-semiconductor transition and 4f electron delocalization in Sm Te Physical Review Letters, 25 (6). pp. 368-370. ISSN 0031-9007
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Official URL: http://prl.aps.org/abstract/PRL/v25/i6/p368_1
Related URL: http://dx.doi.org/10.1103/PhysRevLett.25.368
Abstract
The pressure variation of resistivity and optical absorption in SmTe has been studied. A continuous pressure-induced semiconductor-to-metal transition is observed, which we ascribe to the promotion of electrons from the 4f level into the conduction band as the gap between them shrinks with pressure and finally vanishes. The gap deduced from the saturation resistivity ratio ρ (P)sat/ρ(0) is in good agreement with the gap of 0.62 ± 0.02 eV obtained from infrared absorption data.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 87489 |
| Deposited On: | 19 Mar 2012 06:51 |
| Last Modified: | 29 Nov 2012 10:11 |
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