Annealing of vacancy-type defects and crystallisation of icosahedral Al-Mn-Si

Chidambaram, R. ; Sanyal, M. K. ; Nambissan, P. M. G. ; Sen, P. (1990) Annealing of vacancy-type defects and crystallisation of icosahedral Al-Mn-Si Journal of Physics: Condensed Matter, 2 (1). p. 251. ISSN 0953-8984

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Official URL: http://iopscience.iop.org/0953-8984/2/1/022

Related URL: http://dx.doi.org/10.1088/0953-8984/2/1/022

Abstract

The authors report a positron annihilation investigation of quasicrystalline-to-crystalline phase transition in the Al-Mn-Si alloy system using both Doppler broadening and lifetime measurement techniques. The results show the presence of small vacancy clusters in the as-grown icosahedral phase. Isochronal annealing studies carried out from 100 degrees C onwards show that the vacancy clusters are annealed out along with the crystallisation process. The positron lifetime results rule out the possibility of a central hole which had been postulated in the icosahedral building block called the Mackay icosahedron.

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