History dependence of peak effect in CeRu2 and V3Si: an analogy with the random field Ising systems

Chaudhary, Sujeet ; Rajarajan, A. K. ; Singh, Kanwal Jeet ; Roy, S. B. ; Chaddah, P. (2000) History dependence of peak effect in CeRu2 and V3Si: an analogy with the random field Ising systems Solid State Communications, 114 (1). pp. 5-8. ISSN 0038-1098

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Official URL: http://www.sciencedirect.com/science/article/pii/S...

Related URL: http://dx.doi.org/10.1016/S0038-1098(00)00004-1

Abstract

We present results of transport measurements showing distinct path dependence of the electrical resistance in the superconducting vortex state of single crystal samples of CeRu2 and V3Si. Resistance measured in the vortex state of both the systems prepared by field cooling (FC), indicates a relatively higher degree of disorder than when it is prepared by isothermal variation of field. Small oscillations of magnetic field modify the resistance in the FC state, highlighting the metastable nature of that state. An analogy is drawn with the FC state of the random-field Ising systems.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:A. Superconductors; D. Electronic Transport; D. Flux Pinning; Creep; D. Phase Transitions
ID Code:84502
Deposited On:27 Feb 2012 13:07
Last Modified:19 May 2016 00:55

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