Temperature dependence photo-luminescence of Nd³⁺ doped PLZT ceramic

Abstract

Temperature dependence of photo-luminescence for Nd³⁺ doped PLZT(9/65/35) was measured across its structural phase transition temperature. The absorption corresponding to ⁴ I_9/2→ ⁴ F_5/2, ² H_9/2 energy level near 808 nm was used for exciting the sample. The major emission bands at 0.9, 1.06, and 1.34 μ m were observed. No shift in the peak position of these emission bands was observed across the diffused structural transition with increase in temperature. However, a 10% increase in FWHM was observed. The absence of any discernible peak shift is attributed to the shielding of the intra-configurational 4f-4f transitions, in trivalent Nd³⁺ ions, by external 5 s and 5d orbitals. The red shifted phonon side bands appeared with increase in temperature.