Oxygen-vacancy-related dielectric relaxation and electric conduction in KNbO3 ceramic

Singh, Gurvinderjit ; Tiwari, V. S. ; Gupta, P. K. (2010) Oxygen-vacancy-related dielectric relaxation and electric conduction in KNbO3 ceramic Integrated Ferroelectrics, 117 (1). pp. 1-10. ISSN 1058-4587

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Official URL: http://www.tandfonline.com/doi/abs/10.1080/1058458...

Related URL: http://dx.doi.org/10.1080/10584587.2010.489416

Abstract

The temperature and frequency dependent dielectric and conductivity properties were measured on as-sintered as well as oxygen annealed KNbO3 ceramics. The results show that in addition to phase transition peaks, well defined relaxation peaks are observed in the temperature range 450-700 K. These peaks could be suppressed by annealing the samples in the oxygen atmosphere. The dc-conductivity and maximum dielectric constant values decreases after oxygen annealing. The results are explained on the basis of defect concentration and their dynamics.

Item Type:Article
Source:Copyright of this article belongs to Taylor and Francis Group.
Keywords:KNbO3; Dielectric Permittivity; Impedance Spectroscopy; Oxygen Defects
ID Code:83479
Deposited On:21 Feb 2012 07:48
Last Modified:21 Feb 2012 07:48

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