Sharma, D. K. ; Ramanathan, K. V. (1983) Modeling thermal effects on MOS I-V characteristics IEEE Electron Device Letters, 4 (10). pp. 362-364. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...
Related URL: http://dx.doi.org/10.1109/EDL.1983.25764
Abstract
The temperature distribution in a MOS transistor caused by power dissipation within the device has been calculated by solving the heat diffusion equation. Using this temperature distribution, IV characteristics of a MOS device as modified by thermal effects are calculated. The predicted behavior matches reported experimental observations; in particular, the negative dynamic resistance seen in the saturation region of devices operating at elevated power densities.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 82918 |
| Deposited On: | 15 Feb 2012 12:26 |
| Last Modified: | 15 Feb 2012 12:26 |
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