Modeling thermal effects on MOS I-V characteristics

Sharma, D. K. ; Ramanathan, K. V. (1983) Modeling thermal effects on MOS I-V characteristics IEEE Electron Device Letters, 4 (10). pp. 362-364. ISSN 0741-3106

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The temperature distribution in a MOS transistor caused by power dissipation within the device has been calculated by solving the heat diffusion equation. Using this temperature distribution, IV characteristics of a MOS device as modified by thermal effects are calculated. The predicted behavior matches reported experimental observations; in particular, the negative dynamic resistance seen in the saturation region of devices operating at elevated power densities.

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Deposited On:15 Feb 2012 12:26
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