Total hemispherical emissivity of tungsten

Verret, D. P. ; Ramanathan, K. G. (1978) Total hemispherical emissivity of tungsten Journal of the Optical Society of America, 68 (9). pp. 1167-1172. ISSN 0030-3941

Full text not available from this repository.

Official URL:

Related URL:


The temperature variation of the total hemispherical emissivity εh of an electropolished surface of 3N8 pure tungsten has been investigated with a transient calorimetric technique in the temperature range 180-1000 K. The experimental data are believed to be the first ever obtained on tungsten below 273 K and also the first ever obtained on electropolished tungsten above 273 K. It is found that the data depart in a significant manner at all temperatures investigated from the theory that assumes a zero relaxation time T for conduction electrons. In the range 180-300 K, εh behaves as though T is finite and nearly independent of the frequency. At higher temperatures, εh behaves in a manner that indicates qualitatively that t is frequency dependent. Beginning at 600 K, the slope of the εh-vs-T graph increases steadily up to 1000 K. This increase is belived to be due to the onset of interband excitations.

Item Type:Article
Source:Copyright of this article belongs to Optical Society of America.
ID Code:82908
Deposited On:15 Feb 2012 12:26
Last Modified:15 Feb 2012 12:26

Repository Staff Only: item control page