Bhattacharyya, D. ; Poswal, A. K. ; Dey, G. K. ; Das, N. C. (2004) Investigation of Mo/Si and W/Si interfaces by phase modulated spectroscopic ellipsometry and cross-sectional transmission electron microscopy Vacuum, 76 (1). pp. 31-36. ISSN 0042-207X
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/j.vacuum.2004.05.017
Abstract
Mo and W thin films and Mo/Si/Mo and W/Si/W tri-layers have been deposited by r.f. magnetron sputtering on c-Si substrates as a precursor to the fabrication of Mo/Si and W/Si multilayer X-ray mirrors. The Phase Modulated Spectroscopic Ellipsometry (SE) technique has been used for characterizing the single layer films to derive information regarding the thickness and volume fraction of voids present in the surface layers. The Mo/Si/Mo and W/Si/W tri-layer structures have been characterized by the Cross-sectional Transmission Electron Microscopy (XTEM) technique. The inter-diffusion at the interfaces of the tri-layer structures observed by the XTEM technique has been correlated to the thickness of the surface layers of the metal films obtained from the SE measurement.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Surface Roughness; Interface Diffusion; Spectroscopic Ellipsometry; XTEM |
| ID Code: | 82461 |
| Deposited On: | 10 Feb 2012 15:37 |
| Last Modified: | 10 Feb 2012 15:37 |
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