Ali, Farman ; Periasamy, N. ; Patankar, Meghan P. ; Narasimhan, K. L. (2011) Electronic transport in doped pyrenyl carbazole Journal of Applied Physics, 110 (4). 044507_1-044507_4. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v110/i4/p0445...
Related URL: http://dx.doi.org/10.1063/1.3626046
Abstract
In this paper, we report on electronic transport and impedance measurements on thin films of unintentionally hole doped 3,6-dipyrenyl-N-hexylcarbazole. Evidence for doping from dc conductivity, ESR, and capacitance measurements is presented. From a study of the bias, temperature and frequency dependence of capacitance, we estimate the integrated density of states above the Fermi level to be 1017/cm3. This is also the doping concentration in these samples.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Doping Profiles; Electrical Conductivity; Electronic Density of States; Fermi Level; Organic Semiconductors; Paramagnetic Resonance; Semiconductor Doping; Semiconductor Thin Films |
| ID Code: | 81738 |
| Deposited On: | 07 Feb 2012 11:10 |
| Last Modified: | 07 Feb 2012 11:10 |
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