The oxidation of vacuum deposited films of copper

Hapase, M. G. ; Gharpurey, M. K. ; Biswas, A. B. (1968) The oxidation of vacuum deposited films of copper Surface Science, 9 (1). pp. 87-99. ISSN 0039-6028

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A study of the oxygen uptake vs. temperature behaviour of vacuum deposited copper films in the range 50 to 400°C under 70 mm Hg oxygen pressure showed the existence of the phases CuO0.67 and CuO. Isothermal oxidation studies show the CuO0.67 phase to be stable at the lower temperatures (150-200°C) and the CuO at the higher temperatures (>300°C). In the intermediate range (~210-290°C) the product is also intermediate between the two. The low-temperature data show that a direct logarithmic rate law is obeyed and the activation energy is 5.58 kcal/mole. At 250°C, it is logarithmic as well as inverse logarithmic. At higher temperatures (>300°C) the behaviour is inverse logarithmic, the activation energy corresponding to 5.90 kcal/mole. The reason for the formation of CuO0.67 and CuO has been explained qualitatively.

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