Hansch, W. ; Rao, V. R. ; Eisele, I. (1997) The planar-doped-barrier-FET: MOSFET overcomes conventional limitations 27th European Solid-State Device Research Conference (ESSDERC), Stuttgart, Germany . pp. 624-627.
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Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...
Related URL: http://dx.doi.org/10.1109/ESSDERC.1997.194506
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| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to 27th European Solid-State Device Research Conference (ESSDERC), Stuttgart, Germany. |
| ID Code: | 80943 |
| Deposited On: | 02 Feb 2012 14:26 |
| Last Modified: | 02 Feb 2012 14:26 |
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