Ramgopal Rao, V. ; Wijeratne, G. ; Chu, D. ; Brozek, T. ; Viswanathan, C. R. (1998) Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs 3rd International Symposium on Plasma Process-Induced Damage (P2ID), Hawaii, USA . pp. 124-127.
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Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...
Related URL: http://dx.doi.org/10.1109/PPID.1998.725590
Abstract
The effect of plasma damage on the MOSFET's flicker noise properties is examined in this work. We observe an abnormal noise peak in the 1/f noise spectrum at around 2 kHz which is a characteristic of the plasma damage. The dependence of the noise peak on the plasma induced degradation was studied in virgin n- and p-channel MOSFETs and this peak is shown to correlate well with the amount of damage in the p-MOSFETs.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to 3rd International Symposium on Plasma Process-Induced Damage (P2ID), Hawaii, USA. |
| ID Code: | 80941 |
| Deposited On: | 02 Feb 2012 14:27 |
| Last Modified: | 02 Feb 2012 14:27 |
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