Electrical switching and in situ Raman scattering studies on the set-reset processes in Ge-Te-Si glass

Abstract

Bulk Ge₁₅Te₈₃Si₂ glass has been found to exhibit memory-type switching for 1 mA current with a threshold electric field of 7.3 kV/cm. The electrical set and reset processes have been achieved with triangular and rectangular pulses, respectively, of 1 mA amplitude. In situ Raman scattering studies indicate that the degree of disorder in Ge₁₅Te₈₃Si₂ glass is reduced from off to set state. The local structure of the sample under reset condition is similar to that in the off state. The Raman results are consistent with the switching results which indicate that the Ge₁₅Te₈₃Si₂ glass can be set and reset easily.