Realization of 0.1 um asymmetric channel MOSFETs with excellent short-channel performance and reliability

Cheng, B. ; Ramgopal Rao, V. ; Ikegami, B. ; Woo, J. C. S. (1998) Realization of 0.1 um asymmetric channel MOSFETs with excellent short-channel performance and reliability Technical Digest, 28th European Solid-State Device Research Conference (ESSDERC), Bordeaux, France . pp. 520-523.

Full text not available from this repository.

Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...

Abstract

This article does not have an abstract.

Item Type:Article
Source:Copyright of this article belongs to Technical Digest, 28th European Solid-State Device Research Conference (ESSDERC), Bordeaux, France.
ID Code:79804
Deposited On:28 Jan 2012 11:43
Last Modified:28 Jan 2012 11:43

Repository Staff Only: item control page