Comparison of sub-bandgap impact ionization in deep-sub-micron conventional and lateral asymmetrical channel nMOSFETs

Anil, K. G. ; Mahapatra, S. ; Ramgopal Rao, V. ; Eisele, I. (2000) Comparison of sub-bandgap impact ionization in deep-sub-micron conventional and lateral asymmetrical channel nMOSFETs Proceedings of the International Conference on Solid state Devices and Materials (SSDM) Sendai, Japan . pp. 60-61.

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Item Type:Article
Source:Copyright of this article belongs to Proceedings of the International Conference on Solid state Devices and Materials (SSDM) Sendai, Japan.
ID Code:79794
Deposited On:28 Jan 2012 11:45
Last Modified:28 Jan 2012 11:45

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