Najeeb-ud-Din, ; Ramgopal Rao, V. ; Vasi, J. (2002) Characterization and simulation of lateral asymmetric Channel silicon-on-insulator MOSFETs Proceedings of the 11th International Workshop on The Physics of Semiconductor Devices, Delhi, India, 4746 (2). pp. 644-648. ISSN 1017-2653
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Abstract
This paper presents the characterization and simulation results of Lateral Asymmetric Channel (LAC) doped Silicon-on-Insulator (SOI) MOSFETs. The results are compared with uniformly doped SOI MOSFETs. It is shown that these LAC devices have better characteristics with many advantages.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the 11th International Workshop on the Physics of Semiconductor Devices, Delhi, India. |
| ID Code: | 79782 |
| Deposited On: | 28 Jan 2012 11:48 |
| Last Modified: | 28 Jan 2012 11:48 |
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