Tomar, B. ; Rao, V. R. (2004) Sub-threshold swing degradation due to localized charge storage in SONOS memories Proceedings of the 11th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, Hinshcu, Taiwan . pp. 251-253.
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/IPFA.2004.1345613
Abstract
This paper discusses the effect of localized charge storage on sub-threshold swing and threshold voltage in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cells. By analyzing the change in potential contours, it has been shown that the change in sub-threshold swing is correlated to fringing of electric field lines, and hence to the gate-to-substrate capacitance.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the 11th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, Hinshcu, Taiwan. |
| ID Code: | 79762 |
| Deposited On: | 28 Jan 2012 11:50 |
| Last Modified: | 28 Jan 2012 11:50 |
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