Roy, U. ; Khaderbad, M. A. ; Yedukondalu, M. ; Walawalkar, M. G. ; Ravikanth, M. ; Mukherji, S. ; Rao, V. R. (2009) Hydroxy-phenyl Zn(II) porphyrin self-assembled monolayer as a diffusion barrier for copper-low k interconnect technology Proceedings of the IEEE International Workshop on Electron Devices & Semiconductor Technology, Mumbai, India . pp. 1-5.
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/EDST.2009.5166131
Abstract
In this paper, we have studied the application of metallated porphyrin self-assembled monolayer (SAM) as a copper diffusion barrier for low-k inter-metal dielectric (IMD) CMOS technologies. SAM formed on hydrogen silesquioxane (HSQ), which is a low-k dielectric, has been demonstrated to be effective in preventing diffusion of copper ions into the porous dielectric. This has been shown by fabricating Cu-HSQ-Si and Cu-SAM-HSQ-Si metal-insulator-semiconductor test structures. Bias-temperature stress (BTS) studies have been done to investigate the effectiveness of SAM as a diffusion barrier. Formation of SAM on HSQ has been characterized using Fourier Transform Infra-red Spectroscopy studies. Thermogravimetric analysis (TGA) of hydroxyl-phenyl Zn(II) porphyrin has been used to verify thermal stability of the molecule under back-end-of-line (BEOL) process conditions.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the IEEE International Workshop on Electron Devices & Semiconductor Technology, Mumbai, India. |
| ID Code: | 79740 |
| Deposited On: | 28 Jan 2012 11:56 |
| Last Modified: | 28 Jan 2012 11:56 |
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