Characterization of multiferroic thin films directly deposited on silicon for novel device applications

Prashanthi, K. ; Mandal, M. ; Duttagupta, S. P. ; Pant, Prita ; Palkar, V. R. ; Ramgopal Rao, V. (2010) Characterization of multiferroic thin films directly deposited on silicon for novel device applications Proceedings of the 2010 IEEE International NanoElectornics Conference, Hong Kong, China . pp. 900-901.

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Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...

Related URL: http://dx.doi.org/10.1109/INEC.2010.5425138

Abstract

We have investigated the multiferroic and dielectric properties in Dy modified BiFeO3 thin films deposited directly on silicon using pulsed laser deposition (PLD) technique. The results support the usability of these films in multiferroic based MEMS devices as well as gate dielectrics for future CMOS applications.

Item Type:Article
Source:Copyright of this article belongs to Proceedings of the 2010 IEEE International NanoElectornics Conference, Hong Kong, China.
ID Code:79736
Deposited On:28 Jan 2012 11:58
Last Modified:28 Jan 2012 11:58

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