Shrivastava, M. ; Gossner, H. ; Baghini, M. S. ; Rao, V. R. (2010) On the Transient behavior of various drain extended MOS devices under the ESD stress condition 7th International SoC Design Conference (ISOCC 2010) . pp. 264-267.
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/SOCDC.2010.5682922
Abstract
This paper presents ESD evaluation of various nanoscale drain extended MOS devices. Current and time evolution of current filaments formed under the ESD stress conditions are investigated. A complete picture of device's behavior at the onset of space charge modulation and the evolution of current filamentation is discussed based on Transient Interferometric mapping studies.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to 7th International SoC Design Conference (ISOCC 2010). |
| ID Code: | 79731 |
| Deposited On: | 28 Jan 2012 11:58 |
| Last Modified: | 28 Jan 2012 11:58 |
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