Shrivastava, M. ; Schneider, J. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2009) A new physical insight and 3D device modeling of STI type denmos device failure under ESD conditions Proceedings of the 2009 IEEE International Reliability Physics Symposium (IRPS) . pp. 669-675. ISSN 1541-7026
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/IRPS.2009.5173327
Abstract
We present experimental and simulation studies of STI type DeNMOS devices under ESD conditions. The impact of base-push-out, power dissipation because of space charge build-up and, regenerative NPN action, on the various phases of filamentation and the final thermal runaway is discussed. A modification of the device layout is proposed to achieve an improvement (~2X) in failure threshold (IT2).
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 79726 |
| Deposited On: | 28 Jan 2012 11:56 |
| Last Modified: | 28 Jan 2012 11:56 |
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