Shrivastava, M. ; Schneider, J. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2009) Highly resistive body STI NDeMOS: an optimized DeMOS device to achieve moving current filaments for robust ESD protection Proceedings of the 2009 IEEE International Reliability Physics Symposium (IRPS) . pp. 754-759. ISSN 1541-7026
Full text not available from this repository.
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/IRPS.2009.5173344
Abstract
A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 79725 |
| Deposited On: | 28 Jan 2012 11:54 |
| Last Modified: | 28 Jan 2012 11:54 |
Repository Staff Only: item control page
